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| TSUS4300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES * Package type: leaded * Package form: T-1 * Dimensions (in mm): 3 * Peak wavelength: p = 950 nm * High reliability * Angle of half intensity: = 16 * Low forward voltage 94 8636-1 * Suitable for high pulse current operation * Good spectral matching with Si photodetectors * Package matches with detector TEFT4300 * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. APPLICATIONS * Infrared remote control and free air transmission systems with low forward voltage and small package requirements * Emitter in transmissive sensors * Emitter in reflective sensors PRODUCT SUMMARY COMPONENT TSUS4300 Ie (mW/sr) 18 (deg) 16 P (nm) 950 tr (ns) 800 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE TSUS4300 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 2 170 100 - 40 to + 85 - 40 to + 100 260 300 UNIT V mA mA A mW C C C C K/W www.vishay.com 272 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81053 Rev. 1.6, 04-Sep-08 TSUS4300 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 180 120 100 80 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21316 IF - Forward Current (mA) RthJA = 300 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 300 K/W 21315 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Breakdown voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 s IF = 100 mA VR = 5 V IR = 100 A VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 20 mA SYMBOL VF VF TKVF IR V(BR) Cj Ie Ie e TKe p TKp tr tr tf tf d 7 5 40 30 18 160 20 - 0.8 16 950 50 0.2 800 400 800 400 2.1 35 pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm MIN. TYP. 1.3 2.2 - 1.3 100 MAX. 1.7 UNIT V V mV/K A Document Number: 81053 Rev. 1.6, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 273 TSUS4300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10 1 I e - Radiant Intensity (mW/sr) 10 2 1000 IF - Forward Current (A) t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 100 10 1 0.1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 0 94 7979 94 7947 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1000 I F - Forward Current (mA) e - Radiant Power (mW) 0 1 2 3 4 100 10 1 0.1 10 0 94 7980 V F - Forward Voltage (V) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 VF rel - Relative Forward Voltage (V) 1.6 1.1 IF = 10 mA 1.2 1.0 0.9 Ie rel; e rel IF = 20 mA 0.8 0.8 0.7 0 20 40 60 80 100 0.4 0 - 10 0 10 94 7993 50 100 140 94 7990 Tamb - Ambient Temperature (C) T amb - Ambient Temperature (C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 274 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81053 Rev. 1.6, 04-Sep-08 TSUS4300 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 1.25 e rel - Relative Radiant Power 1.0 I e rel - Relative Radiant Intensity 0 10 20 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.75 0.5 0.25 IF = 100 mA 0 900 950 1000 0.6 94 7981 0.4 0.2 0 0.2 0.4 0.6 94 7994 - Wavelength (nm) Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 3.2 0.1 A C 0.15 Chip position 0.3 3.9 3 0.1 0.1 4.5 3.5 (2.8) < 0.6 0.5 30.6 6.1 0.3 Area not plane 0.25 0.6 0.15 0.4 + 0.15 - 0.05 2.54 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5269.02-4 Issue: 3; 23.04.98 96 12208 1.5 Document Number: 81053 Rev. 1.6, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 275 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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